| PART |
Description |
Maker |
| UGF1006GA UGF1004GA UGF1005GA |
10.0 Amperes Insulated Package Dual Common Anode Ultra Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF1605GD |
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GA SFF2002GA SFF2003GA |
20.0 Amperes Insulated Dual Common Anode Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| SFF2001GD SFF2002GD SFF2003GD |
20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
|
Thinki Semiconductor Co...
|
| CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts
HIGH POWER SWITCHING USE INSULATED TYPE
Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| BTA12-600BW |
With TO-220AB insulated package
|
Inchange Semiconductor ...
|
| IRGP420U GP420U |
Insulated Gate Bipolar Transistors (IGBTs)(瓒?揩???缂?????????朵?绠?
500V Discrete IGBT in a TO-3P (TO-247AC) package
Insulated Gate Bipolar Transistors (IGBTs)(超快速绝缘栅型双极型晶体 绝缘门双极晶体管（IGBTs）（超快速绝缘栅型双极型晶体管）
|
International Rectifier, Corp.
|
| PM30RSF060 |
FLAT-BASE TYPE INSULATED PACKAGE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PM100CSD120 |
FLAT-BASE TYPE INSULATED PACKAGE
|
http://
Mitsubishi Electric Semiconductor
|
| PM50RSA060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSK060 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
| PM50RSD120 |
FLAT BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
|
